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Application of Elastic Mid-IR-Laser-Light Scattering for Non-Destructive Inspection in Microelectronics

Published online by Cambridge University Press:  26 February 2011

Victor P. Kalinushkin ,
Vladimir A. Yuryev ,
Oleg V. Astafiev ,
Alexander N. Buzynin  and
Nikolay I. Bletskan
Victor P. Kalinushkin
Affiliation:
General Physics Institute of RAS, 38 Vavilov Street, Moscow, 117942, Russia
Vladimir A. Yuryev
Affiliation:
General Physics Institute of RAS, 38 Vavilov Street, Moscow, 117942, Russia
Oleg V. Astafiev
Affiliation:
General Physics Institute of RAS, 38 Vavilov Street, Moscow, 117942, Russia
Alexander N. Buzynin
Affiliation:
General Physics Institute of RAS, 38 Vavilov Street, Moscow, 117942, Russia
Nikolay I. Bletskan
Affiliation:
Research and Production Association ELMA, Zelenograd, Moscow, 103482, Russia
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Abstract

Some possible applications of the low-angle mid-IR-light scattering technique and some recently developed on its basis methods for non-destructive inspection and investigation of semiconductor materials and structures are discussed in the paper. The conclusion is made that the techniques in question might be very useful for solving a large number of problems regarding defect investigations and quality monitoring both in research laboratories and the industry of microelectronics.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 615
Copyright
Copyright © Materials Research Society 1995

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References

1. Voronkov, V.V., Murina, T.M., Voronkova, G.I. et al., Fiz. Tverd. Tela 20, 1365 (1978) [Sov. Phys. Solid State 20 (5), 1365 (1978)].Google Scholar
2. Voronkov, V.V., Voronkova, G.I., Zubov, B.V. et al., Fiz. Tverd. Tela 23 (1), 117 (1981) [Sov. Phys. Solid State, 23 (1), 65 (1981)].Google Scholar
3. Voronkov, V.V., Voronkova, G.I., Golovina, V.N. et al., J. Cryst. Growth 52, 939 (1981).Google Scholar
4. Voronkov, V.V., Voronkova, G.I., Kalinushkin, V.P. et al., Fiz. Tekh. Poluprovodn. 18 (12), 2222 (1984) [Sov. Phys. Semicond. 18 (12), 2222 (1984)].Google Scholar
5. Zabolotskii, S.E., Kalinushkin, V.P., Murina, T.M. et al., Phys. Stat. Sol.(a) 88, 539 (1985).Google Scholar
6. Veselovskaya, N.V., Voronkov, V.V., Voronkova, G.I. et al., Fiz. Tverd. Tela 27 (5), 1331 (1985) [Sov. Phys. Solid State 27 (5), 1331 (1985)].Google Scholar
7. Voronkova, A.V., Kalinushkin, V.P., Murina, T.M., and Sysoyeva, N.S. Fiz. Tekh. Poluprovodn. 19 (10), 1902 (1985) [Soy. Phys. Semicond. 19 (10), 1902 (1985)].Google Scholar
8. Kalinushkin, V.P., Murin, D.I., Murina, T.M. et al., Microelectronica 15 (6), 523 (1986) [Sov. Phys. Microelectronics 15 (6), 523 (1986)].Google Scholar
9. Zabolotskii, S.E., Kalinushkin, V.P., Murin, D.I. et al., Fiz. Tekh. Poluprovodn. 21 (8), 1364 (1987) [Sov. Phys. Semicond. 21 (8), 1364 (1987)].Google Scholar
10. Kalinushkin, Victor P., in Proc. Inst. Gen. Phys. Acad. Sci. USSR, Vol.4, Laser Methods of Defect Investigations in Semiconductors and Dielectrics, edited by Manenkov, A.A. (Nova, New York, 1988) pp. 1–75.Google Scholar
11. Batunina, A.V., Voronkov, V.V., Voronkova, G.I. et al., Fiz. Tekh. Poluprovodn. 22 (7), 1308 (1988) [Sov. Phys. Semicond. 22 (7), 1308 (1988)].Google Scholar
12. Voronkov, V.V., Kalinushkin, V.P., Murin, D.I. et al. J. Cryst. Growth 103, 126–130 (1990).Google Scholar
13. Buzynin, A.N., Zabolotskii, S.E., Kalinushkin, V.P. et al., Fiz. Tekh. Poluprovodn. 24 (2), 264 (1990) [Sov. Phys. Semicond. 24 (2), 264 (1990)].Google Scholar
14. Kalinushkin, V.P., Yuryev, V.A., and Murin, D.I., Fiz. Tekh. Poluprovodn. 25, 798 (1991) [Sov. Phys. Semicond. 25 (5), 798 (1991)].Google Scholar
15. Kalinushkin, V.P., Yuryev, V.A., Murin, D.I., and Ploppa, M.G., Semicond. Sci. Technol. 7, A255–A262 (1992).Google Scholar
16. Kalinushkin, V.P., Murin, D.I., Yuryev, V.A. et al., in Second International Symposium on Advanced Laser Technologies, edited by Pustovoy, V. and Jelínek, M., Proc. SPIE 2332, 146–153 (1994).Google Scholar
17. Astafiev, O.V., Kalinushkin, V.P., and Yuryev, V.A., in Second International Symposium on Advanced Laser Technologies, edited by Pustovoy, V. and Jelínek, M., Proc. SPIE 2332, 138–145 (1994).Google Scholar
18. Astafiev, O.V., Kalinushkin, V.P., and Yuryev, V.A., Mater. Sci. Eng. B (submitted for publication).Google Scholar
19. Kalinushkin, V.P., Yuryev, V.A., and Astafiev, O.V., presented at the First International Conference on Materials for Microelectronics, Barcelona, Spain, October 18–23, 1994 (Mater. Sci. Technol, 1995) (submitted for publication).Google Scholar
20. Astafiev, O.V., Kalinushkin, V.P., and Yuryev, V.A., presented at the Ninth International Conference on Microscopy of Semiconducting Materials, Oxford, UK, March 20–23, 1995 (IOP Conf. Ser.) (submitted for publication).Google Scholar
21. Yuryev, Vladimir A. and Kalinushkin, Victor P., Mater. Sci. Eng. B (in the press).Google Scholar
22. Kalinushkin, V.P., Buzynin, A.N., Murin, D.I., Yuryev, V.A., Astafiev, O.V., and Buvaltsev, A.I., presented at the First International Conference on Materials for Microelectronics, Barcelona, Spain, October 18–23, 1994 (unpublished).Google Scholar