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Annealing characteristics of Al-doped hydrogenated microcrystalline cubic silicon carbide films

Published online by Cambridge University Press:  01 February 2011

S. Miyajima ,
A. Yamada  and
M. Konagai
S. Miyajima
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
A. Yamada
Affiliation:
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
M. Konagai
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Abstract

Aluminum-doped hydrogenated microcrystalline cubic silicon carbide (μc-3C-SiC:H) films deposited by the hot wire chemical vapor deposition technique at a low substrate temperature of about 300 °C were annealed at various temperatures in vacuum atmosphere. The increase in conductivity was observed on annealing the films over 400°C. The onset of hydrogen desorption occurred in the undoped films at about 650°C, while the onset was shifted towards lower temperatures in the case of Al-doped films. These results indicate that hydrogen plays an important role on the conductivity of the Al-doped μc-3C-SiC:H films.

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