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An Ultra Low Noise Preamplifier for Room Temperature X-Ray Detectors

Published online by Cambridge University Press:  21 February 2011

G. Bertuccio ,
P. Rehak  and
D.M. Xi
G. Bertuccio
Affiliation:
Politecnico di Milano, Dipartimento di Elettronzca e Informazione, P.za Leonardo da Vinci 32, 20133 Milano, Italy
P. Rehak
Affiliation:
Brookhaven National Laboratory, Upton, NY 11973, USA
D.M. Xi
Affiliation:
Brookhaven National Laboratory, Upton, NY 11973, USA
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Abstract

A new circuital configuration for the charge amplifier is presented. By means of a double feedback loop, the input field-effect transistor can operate with its gate junction sligtly forward biased, collecting the detector current and discharging the feedback capacitor. The feedback resistor is so avoided and no resetting device or circuit is required for the preamplifier operation. The noise is limited by the input transistor, an equivalent noise charge of 19.5 r.m.s. electrons has been measured at room temperature by employing a commercial JFET.

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References

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