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Amorphous Silicon—Germanium Deposited by Photo—CVD

Published online by Cambridge University Press:  28 February 2011

H. Itozaki ,
N. Fujita  and
H. Hitotsuyanagi
H. Itozaki
Affiliation:
Sumitomo Electric Industries, Ltd., 1–1 Koyakita 1—Chome, Itami 664, Japan
N. Fujita
Affiliation:
Sumitomo Electric Industries, Ltd., 1–1 Koyakita 1—Chome, Itami 664, Japan
H. Hitotsuyanagi
Affiliation:
Sumitomo Electric Industries, Ltd., 1–1 Koyakita 1—Chome, Itami 664, Japan
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Abstract

Hydrogenated amorphous silicon germanium (a—SiGe:H) films were deposited by photo—chemical vapor deposition (Photo—CVD) of SiH4 and GeH4 with mercury sensitizer. Their band gap was controlled from 0.9 eV to 1.9 eV by changing the gas ratio of SiH4 and GeH4. High quality opto—electrical properties have been obtained for thea—SiGe:H films by Photo—CVD. Hydrogen termination and microstructure of a-SiGe:H were investigated by infrared absorption and transmission electron microscopy. Ana—Si:H solar cell and an a—Si:H/a—SiGe:H stacked solar cell were made, each of which has conversion efficiency 5.3% and 5.1%, respectively.

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