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Aligned, Coexisting Liquid and Solid Regions in Pulsed and CW Laser Annealing of Si

Published online by Cambridge University Press:  15 February 2011

R. J. Nemanich ,
D. K. Biegelsen  and
W. G. Hawkins
R. J. Nemanich
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
D. K. Biegelsen
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
W. G. Hawkins
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

Aligned, coexisting liquid and solid regions are observed in cw laser annealing of polycrystalline Si films on quartz substrates. These stripe patterns are the precursors of surface topography that exists after cooling. It is proposed that a similar situation exists in the pulse annealing process. A calculation of the temperature evolution which assumes stripe symmetry and kinetic restraints of the crystallization process has been carried out. These calculations indicate a lattice temperature of between 1100 and 1300 K, 10 nsec after the sample has fully solidified.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 211
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

Permanent address: Xerox, Webster Research Center, Webster, NY 14580

References

REFERENCES

1.Leamy, H. J., Rozgonyi, G. A., Sheng, T. T. and Celler, G. K., Appl. Phys. Lett. 32, 535 (1978).Google Scholar
2.Fauchet, P. M. and Siegman, A. E., Appl. Phys. Lett. 40, 824 (1982).Google Scholar
3.Haneman, D. and Nemanich, R. J., Solid State Commun., 43, 203 (1982).Google Scholar
4.Lo, H. W. and Compaan, A., Phys. Rev. Lett. 44, 1604 (1980);Google Scholar
4aCompaan, A., Lo, H. W., Aydinli, A. and Lee, M. C., in Laser and Electron-Beam Solid Interactions and Materials Processing, edited by Gibbons, J. F., Hess, L. D. and Sigmon, T. W. (North Holland, New York 1981) p. 15;Google Scholar
4cCompaan, A., Lo, H. W., Lee, M. C. and Aydinli, A., J. de Phys. 42, C6–453 (1981).Google Scholar
5.Bosch, M. A. and Lemons, R. A., Phys. Rev. Lett. 47, 1151 (1981).Google Scholar
6.Hawkins, W. G. and Biegelsen, D. K., to be published.Google Scholar
7.Guosheng, Z., Fauchet, P. M. and Siegman, A. E., Phys. Rev. B (in press).Google Scholar
8.Wood, R. F. and Giles, G. E., Phys. Rev. B 23, 2923 (1981).Google Scholar
9. For a review see Tiller, W. A, in The Art and Science of Growing Crystals, edited by Gilman, J. J. (Wiley, New York) p. 276.Google Scholar
10.Jackson, K. A., private communication.Google Scholar