Hostname: page-component-54dcc4c588-br6xx Total loading time: 0 Render date: 2025-10-14T07:02:53.820Z Has data issue: false hasContentIssue false
  • English
  • Français

AlGaAs/GaAs Double-Heterostructure Optical Waveguide on SiSubstrates

Published online by Cambridge University Press:  21 February 2011

T. Yuasa ,
M. Umeno ,
S. Sakai ,
N. Wada  and
Y. Ueta
T. Yuasa
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan.
M. Umeno
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan.
S. Sakai
Affiliation:
Department of Electric and Electronic Engineering, Tokushima University, Minami-josanjima, Tokushima 770, Japan.
N. Wada
Affiliation:
on leave from Mastushita Kotobuki Electronic Industries Ltd.
Y. Ueta
Affiliation:
Department of Electric and Electronic Engineering, Tokushima University, Minami-josanjima, Tokushima 770, Japan.
Get access

Abstract

AlGaAs/GaAs double-heterostructure (DH) optical waveguides on Si substrateswhich is important in future opto-electric integrated circuits (OEICs)utilizing both Si and GaAs devices is analyzed by the effective index methodand fabricated by metalorganic chemical vapor deposition (MOCVD).

The structures contain 0.8-μm-thick GaAs guiding layer sandwiched betweentwo 1-μm-thick Al0.1Ga0.9 As cladding layers. All thelayers were grown by MOCVD on (100) 2°-off Si substrates by two step method.A top cladding layer was etched leaving 2-μm wide mesa-stripes. The etcheddepth was changed from 0.65 to 0.90 μm. The field profiles were calculatedand measured for 1.3 μm wavelength light. The measured and calculatedprofiles agree quite well with each other for all the. waveguides havingdifferent mesa height. This agreement makes us possible to design morecomplicated AlGaAs/GaAs waveguides and modulators on Si substrates.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 228: Symposium N – Materials for Optical Information Processing , 1991 , 225
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Fang, S.F., Adomi, k., Lyser, S., Morkoc, H., Zabel, H., Choi, C., and Otsuka, N. J. Appl. Phys. 68 R31 (1990)Google Scholar
2. Soga, T., Jimbo, T., Umeno, M. Appl. Phys. Lett. 56 1433 (1990)Google Scholar
3. Egawa, T., Tada, H., Kobayashi, Y., Soga, T., Jimbo, T., and Umeno, M. Appl. Phys. Lett. 57 1179 (1990)Google Scholar
4. Egawa, T., Nozaki, S., Soga, T., Jimbo, T., Umeno, M. Appl. Phys. Lett. 58 1265 (1991)Google Scholar
5. Nozaki, S., Wu, A.T., Murry, J.J., George, T., Egawa, T., and Umeno, M. Appl. Phys. Lett. 57 2669 (1990)Google Scholar
6. Kuroda, T., Nakamure, M., Aiki, K., and Umeda, J. APPLIED OPTICS 17 3264 1978 CrossRefGoogle Scholar