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Adsorption and Desorption of Contaminant Metals on Si Wafer Surface in SC1 Solution

Published online by Cambridge University Press:  15 February 2011

G. Maeda ,
I. Takahashi ,
H. Kondo ,
J. Ryuta  and
T. Shingyouji
G. Maeda
Affiliation:
Mitsubishi Materials Corporation, 297, Kitabukuro-cho, Omiya-shi, Saitama-ken, Japan
I. Takahashi
Affiliation:
Mitsubishi Materials Corporation, 297, Kitabukuro-cho, Omiya-shi, Saitama-ken, Japan
H. Kondo
Affiliation:
Mitsubishi Materials Corporation, 297, Kitabukuro-cho, Omiya-shi, Saitama-ken, Japan
J. Ryuta
Affiliation:
Mitsubishi Materials Corporation, 297, Kitabukuro-cho, Omiya-shi, Saitama-ken, Japan
T. Shingyouji
Affiliation:
Mitsubishi Materials Corporation, 297, Kitabukuro-cho, Omiya-shi, Saitama-ken, Japan
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Abstract

Variation in the surface concentration of Fe, Ni, Cu and Zn on Si wafers due to treatment in NH4OH/H2aO2/H2O solution called SC1 is investigated. The metal concentration on the wafer surface depends on the initial surface concentration, concentration in the solution, adsorption probability, desorption rate constant and the treatment time. The surface metal concentration behavior is explained by taking into account the effects of these parameters. The variation in the desorption rate constant with the metal species, the concentration in the solution, treatment temperature and mixing ratio of SC1 is discussed.

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References

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