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Activation of Beryllium-Implanted GaN by Two-Step Annealing

Published online by Cambridge University Press:  03 September 2012

Yuejun Sun ,
Leng Seow Tan ,
Soo Jin Chua  and
Savarimuthu Prakash
Yuejun Sun
Affiliation:
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260, Republic of Singapore
Leng Seow Tan
Affiliation:
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260, Republic of Singapore
Soo Jin Chua
Affiliation:
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260, Republic of Singapore
Savarimuthu Prakash
Affiliation:
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260, Republic of Singapore
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Abstract

For the first time, p-type doping through beryllium implantation in gallium nitride was achieved by using a new annealing process, in which the sample was first annealed in forming gas (12% H2 and 88% N2), followed by annealing in pure nitrogen. Variable temperature Hall measurements showed that sheet hole concentrations of the annealed samples were about 1×1013 cm−2 with low hole mobilities. An ionization energy of 127 meV was estimated with a corresponding activation efficiency of ∼ 100%. SIMS results revealed a relationship between the enhanced diffusion of Be and activation of the acceptors.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W3.82
Copyright
Copyright © Materials Research Society 1999

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