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Acceptor Binding Energy And Band Lineup Of III-V Nitride Alloys And Mocvd Growth Of GaN On GaAs - Or GaP-Coated Si

Published online by Cambridge University Press:  21 February 2011

Yoshihiro Ueta ,
Shiro Sakai ,
Yasushi Kamiya  and
Hisao Sato
Yoshihiro Ueta
Affiliation:
Tokushima University, Department of Electrical and Electronic Engineering, Minami-josanjima, Tokushima 770, Japan.
Shiro Sakai
Affiliation:
Tokushima University, Department of Electrical and Electronic Engineering, Minami-josanjima, Tokushima 770, Japan.
Yasushi Kamiya
Affiliation:
Tokushima University, Department of Electrical and Electronic Engineering, Minami-josanjima, Tokushima 770, Japan.
Hisao Sato
Affiliation:
Tokushima University, Department of Electrical and Electronic Engineering, Minami-josanjima, Tokushima 770, Japan.
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Abstract

The acceptor binding energy is calculated to find out the best acceptor impurity in InN, GaN and AlN. Be is predicted to be the shallowest acceptor and the next are Mg and Zn. Group IV elements such as C or Si are very deep. Band lineup is calculated to be ΔEc : ΔEv = 2.1 eV : 0.76 eV = 0.73 : 0.27 = 2.8 : 1 for GaN/AlN and ΔEc : ΔEv = 0.88 eV : 0.66 eV = 0.57 : 0.43 = 1.3 : 1 for GaN/InN. GaN is grown on GaAs and GaP-coated Si substrate by MOCVD. GaAs intermediate layer gives better GaN compared to GaP intermediate layer. It is suggested that the lower bulk modulus of GaAs than that of GaP gives this difference.

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