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X-Ray Absorption at Si K-Edge for Novel Compounds in the Ternary System Si-C-N

Published online by Cambridge University Press:  15 February 2011

P. Kroll ,
A. Greiner ,
R. Riedel ,
S. Bender ,
R. Franke ,
J. Hormes  and
A. A. Pavlychev
P. Kroll
Affiliation:
Fachgebiet Disperse Feststoffe, Fachbereich Materialwissenschaft, Technische Hochschule Darmstadt, 64295 Darmstadt, Germany
A. Greiner
Affiliation:
Fachgebiet Disperse Feststoffe, Fachbereich Materialwissenschaft, Technische Hochschule Darmstadt, 64295 Darmstadt, Germany
R. Riedel
Affiliation:
Fachgebiet Disperse Feststoffe, Fachbereich Materialwissenschaft, Technische Hochschule Darmstadt, 64295 Darmstadt, Germany
S. Bender
Affiliation:
Physikalisches Institut, Universität Bonn, 53115 Bonn, Germany
R. Franke
Affiliation:
Physikalisches Institut, Universität Bonn, 53115 Bonn, Germany
J. Hormes
Affiliation:
Physikalisches Institut, Universität Bonn, 53115 Bonn, Germany
A. A. Pavlychev
Affiliation:
Physikalisches Institut, Universität Bonn, 53115 Bonn, Germany
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Abstract

We present results of Si K-edge XANES-investigations for novel Si-C-N containing solid phases prepared by annealing of Si(NCN)2 at temperatures between room temperature (RT) and 1600°C. The chemical equivalence of the NCN-group arid oxygen as a ligand of silicon is confirmed. The spectra show the presence of an intermediate crystalline phase and its decomposition. Furthermore the recrystallisation of a Si3N4/SiC composite material and its dependence on temperature can be seen.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 437: Symposium DD – Applications of Synchrotron Radiation to III , 1996 , 225
Copyright
Copyright © Materials Research Society 1996

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References

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