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Transport Property Studies on Icosahedral Systems: Rapidly Quenched Al-V, Al-Mn, AND Al-Fe-Mn.

Published online by Cambridge University Press:  25 February 2011

K. V. Rao ,
N. Karpe ,
R. Malmhall ,
H. U. Astrum  and
H. S. Chen
K. V. Rao
Affiliation:
Dept. o4 Solid State Physics, Royal Inst. of Technology, Stockholm, Sweden
N. Karpe
Affiliation:
Dept. o4 Solid State Physics, Royal Inst. of Technology, Stockholm, Sweden
R. Malmhall
Affiliation:
ASEA Research and Innovation, S-721 78 V&6terAs, Sweden
H. U. Astrum
Affiliation:
Dept. o4 Solid State Physics, Royal Inst. of Technology, Stockholm, Sweden
H. S. Chen
Affiliation:
Visiting Scientis6t from: AT& T-Befl Laboratorin, Murray Hill, NJ07974, USA
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Abstract

We report the first Hall, and electrical resistivity study on rapidly quenched icosahedral Al-based alloys. The Hall coefficient is found to be negative and remains so for i(Al-Mn) alloys even for higher Mn concentrations. The magnitude and temperature coefficient of the electrical resistivity behaviour in these alloys is similar to those observed for amorphous metallic alloys. Thus, the conduction process in i(Al-based alloys) is essentially electronic but with a carrier mobility an order of magnitude smaller than that known for crystalline aluminium.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 58 , 1985 , 229
Copyright
Copyright © Materials Research Society 1986

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References

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