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Transport Properties Of Doped CsBi4Te6 Thermoelectric Materials

Published online by Cambridge University Press:  10 February 2011

Paul W. Brazis ,
Melissa Rocci ,
Duck-Young Chung ,
Mercouri G. Kanatzidis  and
Carl R. Kannewurf
Paul W. Brazis
Affiliation:
Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208–3118
Melissa Rocci
Affiliation:
Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208–3118
Duck-Young Chung
Affiliation:
Department of Chemistry and Center for Fundamental Materials Research, Michigan State University, East Lansing, MI 48824–1322
Mercouri G. Kanatzidis
Affiliation:
Department of Chemistry and Center for Fundamental Materials Research, Michigan State University, East Lansing, MI 48824–1322
Carl R. Kannewurf
Affiliation:
Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208–3118
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Abstract

In previous investigations we have introduced a variety of new chalcogenide-based materials with promising properties for thermoelectric applications. The chalcogenide CsBi4Te6 was previously reported to have a high ZT product with a maximum value at 260K. In order to improve this value, a series of doped CsBi4Te6 samples has been synthesized. Current doping studies have been very encouraging, with one sample found to have a maximum power factor of 51.5 μW/cm·K2 at 184 K. This paper reports on material characterization studies through the usual transport measurements to determine optimum doping concentration for various dopants.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 545: Symposium Z – Thermoelectric Materials 1998 - The Next Generation… , 1998 , 75
Copyright
Copyright © Materials Research Society 1999

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