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Transparent ZnO-Based Ohmic Contact to p-GaN

Published online by Cambridge University Press:  21 March 2011

E. Kaminska ,
A. Piotrowska ,
K. Golaszewska ,
M. Guziewicz ,
R. Kruszka ,
A. Kudla ,
T. Ochalski ,
A. Barcz ,
T. Dietl  and
F. Matsukura
...Show all authors
E. Kaminska
Affiliation:
Institute of Electron Technology, Al. Lotnikow 46, 02-668 Warsaw, Poland
A. Piotrowska
Affiliation:
Institute of Electron Technology, Al. Lotnikow 46, 02-668 Warsaw, Poland
K. Golaszewska
Affiliation:
Institute of Electron Technology, Al. Lotnikow 46, 02-668 Warsaw, Poland
M. Guziewicz
Affiliation:
Institute of Electron Technology, Al. Lotnikow 46, 02-668 Warsaw, Poland
R. Kruszka
Affiliation:
Institute of Electron Technology, Al. Lotnikow 46, 02-668 Warsaw, Poland
A. Kudla
Affiliation:
Institute of Electron Technology, Al. Lotnikow 46, 02-668 Warsaw, Poland
T. Ochalski
Affiliation:
Institute of Electron Technology, Al. Lotnikow 46, 02-668 Warsaw, Poland
A. Barcz
Affiliation:
Institute of Electron Technology, Al. Lotnikow 46, 02-668 Warsaw, Poland Institute of Physics, PAS, Al. Lotnikow 46, 02-668 Warsaw, Poland
T. Dietl
Affiliation:
Institute of Physics, PAS, Al. Lotnikow 46, 02-668 Warsaw, Poland
F. Matsukura
Affiliation:
Institute of Physics, PAS, Al. Lotnikow 46, 02-668 Warsaw, Poland Research Institute of Electrical Communication, Tohuku University, Sendai 980-8577, Japan
M. Sawicki
Affiliation:
Institute of Physics, PAS, Al. Lotnikow 46, 02-668 Warsaw, Poland
A. Wawro
Affiliation:
Institute of Physics, PAS, Al. Lotnikow 46, 02-668 Warsaw, Poland
M. Zielinski
Affiliation:
Institute of Physics, PAS, Al. Lotnikow 46, 02-668 Warsaw, Poland
J. Jasinski
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720, U.S.A.
Z. Liliental-Weber
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720, U.S.A.
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Abstract

Highly conductive ZnO films were fabricated on p-GaN in a two-step process. First, zinc was thermally evaporated on p-GaN. Next, zinc film was oxidized in oxygen flow. To increase the conductivity of ZnO, nitrogen was introduced into zinc during its deposition. The above procedure proved successful in fabricating ZnO of the resistivity of ~1x10-3Ωcm and resulted in ohmic contacts of resistivity ~1x10-2Ωcm2 to low-doped p-GaN, and light transmittance of ~75% in the wavelength range of 400-700 nm.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I13.1.1
Copyright
Copyright © Materials Research Society 2002

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