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Thermal Equilibrium, Metastable and Irreversible Defects in a-Si:H

Published online by Cambridge University Press:  25 February 2011

R. A Street  and
K. Winer
R. A Street
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
K. Winer
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

Measurements are reported of metastable defect states in undoped a-Si: H, with the aim of understanding the relation between the different types of metastability. The temperature dependence of the thermal equilibrium defect density agrees well with a proposed thermodynamic model and their relaxation time varies with deposition conditions. The rate of light induced defect creation and annealing in samples deposited at low temperature and with a large initial defect density, decreases progressively as the irreversible defects are removed by annealing.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 131
Copyright
Copyright © Materials Research Society 1989

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References

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