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Thermal analysis of nonvolatile and non rotation phase change memory cell

Published online by Cambridge University Press:  01 February 2011

L. P. Shi ,
T. C. Chong ,
J. M. Li ,
H. X. Yang  and
J. Q. Mou
L. P. Shi
Affiliation:
Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608; Email: SHI_Luping@dsi.a-star.edu.sg
T. C. Chong
Affiliation:
Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608; Email: SHI_Luping@dsi.a-star.edu.sg
J. M. Li
Affiliation:
Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608; Email: SHI_Luping@dsi.a-star.edu.sg
H. X. Yang
Affiliation:
Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608; Email: SHI_Luping@dsi.a-star.edu.sg
J. Q. Mou
Affiliation:
Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608; Email: SHI_Luping@dsi.a-star.edu.sg
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Abstract

In this paper, a three-dimensional finite-element modeling is performed for the analyses of Chalcogenide Random Access Memory (C-RAM), a non-rotation nonvolatile phase change memory cell. The thermal effect generated by an incident electric pulse was mainly discussed. Thermal performances of the cell as a result of electrical and geometrical variations were quantified. Current density distribution, temperature profiles, temperature history, heating rate, cooling rate, and heat flow characteristics were obtained and analyzed. The study is useful for the failure analysis of the C-RAM.

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References

REFERENCES

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