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TemperatÜRe Measurement by Infrared Transmission for Rapid Thermal Processing Applications

Published online by Cambridge University Press:  25 February 2011

J.C. Sturm ,
P.V. Schwartz  and
P.M. Garone
J.C. Sturm
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, N.J. 08544
P.V. Schwartz
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, N.J. 08544
P.M. Garone
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, N.J. 08544
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Abstract

We report a new non-invasive optical technique for the measurement of the absolute temperature of silicon wafers in a rapid thermal processing environment. The method is based on the temperature dependence of the infrared absorption of silicon. Unlike pyrometry, the method can be used with a quartz processing chamber, and it is well-suited to the temperature range of 400 °C to 800 °C. Temperature resolution on the order of one degree can be achieved, and the method can easily be applied to homoepitaxial and certain heteroepitaxial growth cycles.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 401
Copyright
Copyright © Materials Research Society 1990

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References

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