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The Surface Chemistry of CdTe Mocvd

Published online by Cambridge University Press:  22 February 2011

Wen-Shryang Liu  and
Gregory B. Aupp
Wen-Shryang Liu
Affiliation:
Science and Engineering of Materials Program
Gregory B. Aupp
Affiliation:
Department of Chemical, Bio and Materials Engineering Center for Solid State Electronics Research Arizona State University, Tempe, Arizona 85287-6006
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Abstract

Temperature programmed desorption (TPD) studies in ultra high vacuum revealed that diethyltellurium (DETe) and dimethylcadmium (DMCd) adsorb weakly on clean Si(100) and desorb upon heating without decomposing. These precursors adsorb both weakly and strongly on CdTe(111)A, with DMCd exhibiting the stronger interaction with the surface than DETe. Dimethylcadmium partially decomposes to produce Cd adatoms; a large fraction of the excess Cd atoms desorb upon heating. In contrast, DETe desorbs without decomposing, suggesting that the rate limiting step in CdTe MOCVD on CdTe(111)A is surface decomposition of the tellurium alkyl.

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