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Studies of Defects in ZnO by Positron Annihilation

Published online by Cambridge University Press:  26 February 2011

Werner Puff ,
Sebastian Brunner ,
Peter Mascher  and
Adam G. Balogh
Werner Puff
Affiliation:
Institut für Kernphysik, Technische Univerisität Graz, Petersgasse 16, A-8010 Graz, Austria
Sebastian Brunner
Affiliation:
Institut für Kernphysik, Technische Univerisität Graz, Petersgasse 16, A-8010 Graz, Austria
Peter Mascher
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ont. L8S 4L7, Canada
Adam G. Balogh
Affiliation:
FB Materialwissenschaft, FG Dünne Schichten, Technische Hochschule Darmstadt, Hilpertstraße 31, 64295 Darmstadt, Germany
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Abstract

In order to investigate the basic properties of radiation-induced defects in ZnO crystals, positron annihilation lifetime and Doppler-broadening measurements were performed on crystals sinterd for 18 hours at 1200 °C and irradiated with 3 MeV protons at 223 K. The irradiation induced a colour change of the specimens from the original yellowish-white to dark orange or even brown. Isochronal annealing experiments showed three annealing stages, centred at about 150 °C, 500 – 550 °C, and 750 °C, respectively. These stages are related to the annealing of variously sized vacancy complexes.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 977
Copyright
Copyright © Materials Research Society 1995

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