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Structural Properties of Amorphous Silicon Produced by Electron Irradiation

Published online by Cambridge University Press:  15 February 2011

J. Yamasaki  and
S. Takeda
J. Yamasaki
Affiliation:
Department of Physics, Graduate School of Science, Osaka University-Toyonaka, 1-16, Machikaneyama-cho, Toyonaka, Osaka 560-0043, Japan
S. Takeda
Affiliation:
Department of Physics, Graduate School of Science, Osaka University-Toyonaka, 1-16, Machikaneyama-cho, Toyonaka, Osaka 560-0043, Japan
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Abstract

The structural properties of the amorphous Si (a-Si), which was created from crystalline silicon by 2 MeV electron irradiation at low temperatures about 25 K, are examined in detail by means of transmission electron microscopy and transmission electron diffraction. The peak positions in the radial distribution function (RDF) of the a-Si correspond well to those of a-Si fabricated by other techniques. The electron-irradiation-induced a-Si returns to crystalline Si after annealing at 550°C.

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