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Reliable Local Strain Characterization on Si/SiGe Structures in Biaxial Tension

Published online by Cambridge University Press:  01 February 2011

Wenjun Zhao ,
Gerd Duscher ,
Mohammed A. Zikry  and
George Rozgonyi
Wenjun Zhao
Affiliation:
wzhao@ncsu.edu, North Carolina State University, Materials Science and Engineering, 911 Parnters Way, RM 3074 EB1, RALEIGH, NC, 27606, United States
Gerd Duscher
Affiliation:
Gerd_duscher@ncsu.edu, North Carolina State University, MSE, 911 Parnters Way, RM 3074 EB1, RALEIGH, NC, 27606, United States
Mohammed A. Zikry
Affiliation:
zikry@ncsu.edu, North Carolina State University, Mechanical and Aerospace Department, RALEIGH, NC, 27606, United States
George Rozgonyi
Affiliation:
rozgonyi@ncsu.edu, North Carolina State University, Materials Science and Engineering, RALEIGH, NC, 27606, United States
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Abstract

The strain in the strained Si layer on a blanket strained Si/SiGe structure could not be determined with only convergent beam electron diffraction to high order Laue zone (HOLZ) line splitting. Combined with CBED and finite element calculations, we quantified the deformation field from HOLZ line splitting and demonstrated a procedure to determine the initial strain in the strained Si layer. Our results also gave us insights in strain relaxation in a TEM sample. The CBED technique combined with FE modeling has the potential for initial strain measurements on new generation short channel CMOS technology nodes.

Keywords

stress/strain relationshiptransmission electron microscopy (TEM)Si

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 958: Symposium L – Group IV Semiconductor Nanostructures—2006 , 2006 , 0958-L04-08
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1 Ikarashi, N. Toda, A., and Ono, H., J. Crystal Growth 210, 341 (2000).Google Scholar
2 Zuo, J. M. Kim, M., and Park, G., Appl. Phys. Lett. 84 (12), 2181 (2004).Google Scholar
3 Pantel, R. Clement, L., Kwakman, L. F. T., Rouviere, J. L., Appl. Phys. Lett. 85, 651 (2004).Google Scholar
4 Istratov, A. A. Zhang, P., Weber, E. R., Kisielowski, C., He, H., Nelson, C., and Spence, J. C. H., Appl. Phys. Lett. 89, 161907 (2006).Google Scholar
5 Kim, M. J. Huang, J., Tang, S., and Wise, R., Appl. Phys. Lett. 89, 063114 (2006).Google Scholar
6 Zikry, M. A. Ashmawi, W. M., Wang, K., and Reeber, R. R., J. Crystal Growth 266, 415 (2004).Google Scholar
7 Moaveni, S., Theory and APplication with Ansys. (Pearson/Prentice Hall, Upper Saddle River, NJ, 2003).Google Scholar
8 Pantel, R. Clement, L., Kwakman, L. F. T., and Rouviere, J. L., Appl. Phys. Lett. 85 (4), 651 (2004).Google Scholar
9 Anjum, D. Li, J., Hull, R., Xia, G., and Hoyt, J. L., Appl. Phys. Lett. 87, 222111 (2005).Google Scholar
10 Yeo, Y. C. and Sun, J., Appl. Phys. Lett. 86, 23103 (2005).Google Scholar
11 Harker, A. H. Jain, S. C., Atkinson, A., and Pinardi, K., J. Appl. Phys. 78, 1630 (1995).Google Scholar
12 Androussi, Y. Benabbas, T., and Lefebvre, A., J. Appl. Phys. 86, 1945 (1999).Google Scholar
13 Liu, G. R. and Quek, S. S., Semicond. Sci. Technol 17, 639 (2002).Google Scholar
14 Williams, D. B. and Carter, C. B., Transmission Electron Microscopy: a Textbook for Materials Science III. (Plenum Press, New York, 1996).Google Scholar