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The Redistribution of Impurities Under RTP for Polysilicon Capped Silicon

Published online by Cambridge University Press:  28 February 2011

R. S. Hockett
R. S. Hockett*
Affiliation:
Monsanto Electronic Materials Company 501 Pearl Drive, P.O. Box 8 St. Peters, MO 63376
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Abstract

Rapid Thermal Processing is being evaluated in the IC industry as a way to meet the thermal budget requirements of reduced scaling in high performance Si IC's. As scaling is reduced and alternative processing is used, the study of low level interfacial impurities is expected to become more important. An example is presented here for the redistribution of interfacial impurities under RTP for polysilicon capped silicon similar to that proposed for shallow junction bipolar transistors.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 41
Copyright
Copyright © Materials Research Society 1987

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References

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