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Recent Progress of Alloyed Ohmic Contacts to GaAs Compound Semiconductors

Published online by Cambridge University Press:  25 February 2011

Masanori Murakami ,
A. Otsuki ,
K. Tanahashi ,
H. J. Tarata ,
A. Callegari  and
N. Lustig
Masanori Murakami
Affiliation:
Department of Metal Science and Technology, Kyoto University, Sakyo-ku, Kyoto 606, Japan
A. Otsuki
Affiliation:
Department of Metal Science and Technology, Kyoto University, Sakyo-ku, Kyoto 606, Japan
K. Tanahashi
Affiliation:
Department of Metal Science and Technology, Kyoto University, Sakyo-ku, Kyoto 606, Japan
H. J. Tarata
Affiliation:
Department of Metal Science and Technology, Kyoto University, Sakyo-ku, Kyoto 606, Japan
A. Callegari
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
N. Lustig
Affiliation:
IBM GTD, Route 52, Hopwell Junction, New York 12533
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Abstract

Low resistance, alloyed AuGeNi Ohmic contacts have been extensively used in the current manufacturing GaAs devices. However, extension of usage of these devices to Very Large Scale Integration levels requires the contacts with excellent thermal stability, shallow diffusion depth, and smooth contact surface in addition to low contact resistance. In the present paper recent studies for development of “non-gold” Ohmic contacts which improve the poor contact properties of the alloyed Ohmic contacts are rev i ewed.

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