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Rapid growth of bulk GaN crystal using GaN powder as source material

Published online by Cambridge University Press:  01 February 2011

Huaqiang Wu ,
Joseph Spinelli ,
Phanikumar Konkapaka  and
Michael Spencer
Huaqiang Wu
Affiliation:
hw63@cornell.edu, Cornell University, School of Electrical & Computer Engineering, 401 Phillips Hall, Cornell University, Ithaca, NY, 14853, United States
Joseph Spinelli
Affiliation:
joseph.spinelli@gmail.com, The Cooper Union for the Advancement Science and Art, Department of Chemical Engineering, United States
Phanikumar Konkapaka
Affiliation:
pk59@cornell.edu
Michael Spencer
Affiliation:
spencer@ece.cornell.edu, Cornell University, United States
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Abstract

Using a novel gallium (Ga) vapor transport technique, thick gallium nitride (GaN) layers have been grown using GaN powder as the source material. In this technique, GaN powder decomposes at 1100°C into gallium and nitrogen vapors. The Ga vapors are transported to the seed substrate and reacted with ammonia to form a crystalline GaN layer. The seed was composed of a sapphire substrate with a 2 microns HVPE GaN layer on it. The growth temperature was set at 1180°C. Using this technique, growth rates as high as 500 μm/hr were achieved. The grown GaN layers were single crystal and were characterized by X-ray diffraction and scanning electron microscopy.

Keywords

crystal growthIII-VGa

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF30-01
Copyright
Copyright © Materials Research Society 2006

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