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Pulse-Duration-Dependent-Free-Carrier-Absorption inSemiconductors

Published online by Cambridge University Press:  25 February 2011

P. Mukherjee ,
M. Sheik-Bahaei  and
H.S. Kwok
P. Mukherjee
Affiliation:
Department of Electrical and Computer Engineering, State University of New York at Buffalo, Bell Hall, Amherst NY 14260
M. Sheik-Bahaei
Affiliation:
Department of Electrical and Computer Engineering, State University of New York at Buffalo, Bell Hall, Amherst NY 14260
H.S. Kwok
Affiliation:
Department of Electrical and Computer Engineering, State University of New York at Buffalo, Bell Hall, Amherst NY 14260
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Abstract

The free carrier absorption in InSb was found to depend on the pulseduration of the picosecond CO2 laser pulse. This is interpreted as theeffect of incomplete carrier relaxation within the laser pulse duration. Anelectron energy relaxation time of 5.6 ps was derived from the observation.The present experiment presents a new method of measuring relaxation timesin semiconductors and metals.

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References

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