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Properties of E-Beam Interactive Oxide Films

Published online by Cambridge University Press:  25 February 2011

J. L. Hollenbeck  and
R. C. Buchanan
J. L. Hollenbeck
Affiliation:
Department of Ceramic Engineering, University of Illinois
R. C. Buchanan
Affiliation:
Department of Ceramic Engineering, University of Illinois
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Abstract

Deposition of E-beam interactive films by rf sputtering and their behavior under high intensity irradiation was investigated. Both polycrystalline and amorphous films of SiO2, ZrO2, Al2O3, and Y2O3 were deposited and their behavior under irradiation found to-be strongTy dependent on film structure. Using a modified STEM the formation of small holes (<10nm diam.) was achieved with exposure times in the millisecond range. Deposition parameters, film characteristics, drilling behavior, and a possible mechanism are discussed.

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Articles
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MRS Online Proceedings Library (OPL) , Volume 72: Symposium G – Electronic Packaging Materials Science II , 1986 , 289
Copyright
Copyright © Materials Research Society 1986

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