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Plasma-Assisted Chemical Vapor Deposition of Ceramic Films and Coatings

Published online by Cambridge University Press:  21 February 2011

Robert F. Davis
Robert F. Davis*
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695–7907
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Abstract

Plasma-assisted chemical vapor deposition uses energetic electrons to decompose reactant gas molecules into more simple and more highly reactant species to achieve deposition of amorphous and crystalline films and coatings at reduced temperatures. The basis of this technique, as well as the deposition conditions and properties of several ceramic films including Al2O3, TiO2, ZnO, AN, BN, TiN, SiC, Si, GaAs, SiC, C (diamond) and GaN, are briefly described. Modifications of the classical immersed method, including remote plasmas, the use of microwave frequencies and electron cyclotron resonance techniques, are also described with material examples.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 155: Symposium L – Processing Science of Advanced Ceramics , 1989 , 213
Copyright
Copyright © Materials Research Society 1989

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References

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