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Photoemission Studies of the Initial Adsorption and Growth of Ag on Ge(111)

Published online by Cambridge University Press:  25 February 2011

A. L. Wachs ,
T. Miller ,
A. P. Shapiro  and
T. -C. Chiang
A. L. Wachs
Affiliation:
Department of Physics and Materials Research Laboratory, 1110 W. Green St., Urbana, IL 61801
T. Miller
Affiliation:
Department of Physics and Materials Research Laboratory, 1110 W. Green St., Urbana, IL 61801
A. P. Shapiro
Affiliation:
Department of Physics and Materials Research Laboratory, 1110 W. Green St., Urbana, IL 61801
T. -C. Chiang
Affiliation:
Department of Physics and Materials Research Laboratory, 1110 W. Green St., Urbana, IL 61801
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Abstract

We present electron diffraction, and high-resolution angle-resolved and angle-integrated photoemission studies of the initial phases of adsorption and growth of Ag on Ge(111). The results provide information on the structural properties of the Ge(111)-c(2×8) substrate surface, show Ag grows upon it almost laminarly at room temperature, and unambiguously demonstrate the presence of a small amount of Ge segregating on top of the growing Ag overlayer. The origins and behavior of these segregated atoms are discussed. Ag films more than a few monolayers thick exhibit quantum well states which are observed to evolve as a function of film thickness.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 94: Symposium D – Initial Stages of Epitaxial Growth , 1987 , 225
Copyright
Copyright © Materials Research Society 1987

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References

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