Hostname: page-component-54dcc4c588-sdd8f Total loading time: 0 Render date: 2025-10-11T14:15:32.949Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoelectron Spectroscopy of Conduction-Electron EnergyDistributions in Laser-Excited Silicon

Published online by Cambridge University Press:  25 February 2011

J.P. Long ,
R.T. Williams ,
J.C. Rife  and
M.N. Kabler
J.P. Long
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375-5000
R.T. Williams
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375-5000
J.C. Rife
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375-5000
M.N. Kabler
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375-5000
Get access

Abstract

Electron energy distributions, extending from equilibrium surface statesthrough transiently populated conduction band states, have been observed inlaser excited silicon by means of transient photoelectron spectroscopy.Atomically clean (111) wafers in UHV were excited by 90 nsec, 2.33 eV or 65nsec, 4.66 eV pulses. Photoelectron spectra were obtained with the 4.66 eVpulses. Photovoltage shifts have been measured and found to saturate. Wehave identified a feature in the excited state portion of the spectra due toelectrons which have equilibrated in the conduction band minima (CBM).Electron temperatures as a function of 2.33 eV pump fluence have beenextracted from the spectra and are shown to be in equilibrium with thelattice above 1100 K. Very hot non-equilibrium electrons are also observedto ~ 4 eV above the CBM. A method of determining the diffusion depth of CBMelectrons has been developed and applied to our data.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Williams, R.T., Royt, T.R., Rife, J.C., Long, J.P., Kabler, M.N., J. Vac. Sci. Technol., 21, 509 (82).Google Scholar
2. Bensoussan, M., Moison, J.M., Phys. Rev., B27, 5192 (83).Google Scholar
3. Aspnes, D.E., Studna, A.A., Phys. Rev., B27, 985 (83).Google Scholar
4. Rowe, J.E., Christman, S.B., Ibach, H., Phys. Rev. Lett., 34, 8/4 (75).Google Scholar
5. Liu, J.M., Optics Lett., 7, 196 (82).Google Scholar
6. Himpsel, F.J., Hollinger, G., Pollak, R.A., Phys. Rev., B28, 7014 (83).Google Scholar
7. Long, J.P., Williams, R.T., Royt, T.R., Rife, J.C., Kabler, M.N., in Laser-Solid Interactions and Transient Thermal Processing of Materials, ed. by Narayan, J., Brown, W.L., Lemons, R.A. (North-Holland, N.Y., 1983).Google Scholar
8. A. Dubridge, Lee, Phys. Rev., 43, 727 (33).Google Scholar
9. Bennett, P.A., Webb, M.W., Surf. Sci., 104, 74 (81).Google Scholar
10. Long, J.P., Williams, R.T., Rife, J.C., Kabler, M.N., to be published.Google Scholar