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Optical Properties of Nanocrystalline Silicon Films with Different Deposition Temperatures

Published online by Cambridge University Press:  21 February 2011

A. M. Ali ,
T. Inokuma ,
Y. Kurata  and
S. Hasegawa
A. M. Ali
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920-8667, Japan
T. Inokuma
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920-8667, Japan
Y. Kurata
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920-8667, Japan
S. Hasegawa
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920-8667, Japan
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Nanocrystalline silicon (nc-Si) films were deposited on fused quartz and single (100) crystal Si substrates by plasma-enhanced chemical vapor deposition from a SiH4-H2 mixture at various deposition temperatures, T δ. The effects of plasma-assisted hydrogenation at 300°C on the optical and structural properties were examined for the nc-Si films. The film deposited at T δ = 730°C exhibits photoluminescence (PL) in its as-deposited state, but the intensity of PL decreases after hydrogenation. We find that a correlation between the PL intensity and infrared absorption bands at around 850 and 1000 cm−1.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 581: Symposium F – Nanophase & Nanocomposite Materials II , 1999 , 565
Copyright
Copyright © Materials Research Society 2000

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