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Onset of GaAs Homoepitaxy and Heteroepitaxy

Published online by Cambridge University Press:  25 February 2011

D K. Biegelsen ,
R. D. Bringans ,
J. E. Northrup  and
L.-E. Swartz
D K. Biegelsen
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304
R. D. Bringans
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304
J. E. Northrup
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304
L.-E. Swartz
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304
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Abstract

We present scanning tunneling microscopy images and atomic models for a variety of GaAs(100) reconstructed surfaces. For homoepitaxial material we show the sequence of phases from c(4×4) through c(8×2) as the As surface concentration is reduced. For the heteroepitaxial GaAs/Si(100) growth we show the first two stages of film development, namely, Si(100):As-(1×2) monolayer coverage followed by adsorption of a submonolayer of Ga dimers. The next stages of film development are discussed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989 , 21
Copyright
Copyright © Materials Research Society 1990

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References

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