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Nucleation of Gaas on Vicinal Si(100) Surfaces

Published online by Cambridge University Press:  25 February 2011

R. Hull ,
A. Fischer-Colbrie ,
S. J. Rosner ,
S. M. Koch  and
J. S. Harris Jr
R. Hull
Affiliation:
Now at AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
A. Fischer-Colbrie
Affiliation:
Hewlett Packard Laboratories, 3500 Deer Creek Road, Palo Alto, CA 94304
S. J. Rosner
Affiliation:
Also at Electrical Engineering Dept., Stanford University, Stanford, CA 94305
S. M. Koch
Affiliation:
Electrical Engineering Dept., Stanford University, Stanford, CA 94305
J. S. Harris Jr
Affiliation:
Electrical Engineering Dept., Stanford University, Stanford, CA 94305
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Abstract

We investigate the nucleation of epitaxial GaAs grown on vicinal Si(100) surfaces by Molecular Beam Epitaxy. We find that the vicinal surface structure is highly sensitive to the surface cleaning process, and that in-situ desorption of a volatile surface oxide at 900°C appears to result in significant step mobility, resulting in the formation of low angle surface facets. Nucleation of GaAs then occurs on these facets, raising the possibilty of influencing the heteroepitaxial nucleation and growth processes by influencing the substrate surface “template” at the surface cleaning stage.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 94: Symposium D – Initial Stages of Epitaxial Growth , 1987 , 25
Copyright
Copyright © Materials Research Society 1987

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References

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