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Morphology and surface reconstructions of m-plane GaN

Published online by Cambridge University Press:  11 February 2011

C. D. Lee ,
R. M. Feenstra ,
J. E. Northrup ,
L. Lymperakis  and
J. Neugebauer
C. D. Lee
Affiliation:
Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213
R. M. Feenstra
Affiliation:
Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213
J. E. Northrup
Affiliation:
Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
L. Lymperakis
Affiliation:
Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4–6, D-14195 Berlin, Germany
J. Neugebauer
Affiliation:
Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4–6, D-14195 Berlin, Germany
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Abstract

M-plane GaN(1100) is grown by plasma assisted molecular beam epitaxy on ZnO(1100) substrates. A low-temperature GaN buffer layer is found to be necessary to obtain good structural quality of the films. Well oriented (1100) GaN films are obtained, with a slate like surface morphology. On the GaN(1100) surfaces, reconstructions with symmetry of c(2×2) and approximate “4×5” are found under N- and Ga-rich conditions, respectively. We propose a model for Ga-rich conditions with the “4×5” structure consisting of ≥ 2 monolayers of Ga terminating the GaN surface.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L4.1
Copyright
Copyright © Materials Research Society 2003

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References

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