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Molecular beam epitaxy of GaSb/AlSb optical device layers on Si(100)

Published online by Cambridge University Press:  25 February 2011

R. J. Malik ,
J. P. van der Ziel ,
B. F. Levine ,
C. G. Bethea ,
P. M. Petroff ,
J. Walker  and
R. Hamm
R. J. Malik
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J. P. van der Ziel
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
B. F. Levine
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
C. G. Bethea
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
P. M. Petroff
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J. Walker
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
R. Hamm
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

We report for the first time the growth of GaSb/AlSb multilayers and alloys on Si(100) by molecular beam epitaxy. High quality films were achieved in spite of the large lattice constant mismatch of 12%. Room temperature, optically pumped pulsed lasers emitting at 1.8μm have been demonstrated. Lateral photoconductive detectors with responsivities of 0.18 A/W have also been made. The film nucleation on the Si substrate was observed in-situ by reflection high energy electron diffraction. Characterization of the grown epilayers and preliminary optical device results are described.

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Articles
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MRS Online Proceedings Library (OPL) , Volume 67: Symposium A – Heteroepitaxy on Silicon I , 1986 , 119
Copyright
Copyright © Materials Research Society 1986

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