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Microstructure Effects in Hot-wire Deposited Undoped Microcrystalline Silicon Films

Published online by Cambridge University Press:  01 February 2011

Wolfhard Beyer ,
Reinhard Carius ,
Dorothea Lennartz ,
Lars Niessen  and
Frank Pennartz
Wolfhard Beyer
Affiliation:
w.beyer@fz-juelich.de, Forschungszentrum Jülich GmbH, IEF5 Photovoltaik, Leo Brandt Strasse, Jülich, 52425, Germany, 492461612925, 492461613735
Reinhard Carius
Affiliation:
r.carius@fz-juelich.de, Forschungszentrum Jülich GmbH, IEF5 Photovoltaik, Leo Brandt Strasse, Jülich, 52425, Germany
Dorothea Lennartz
Affiliation:
d.lennartz@fz-juelich.de, Forschungszentrum Jülich GmbH, IEF5 Photovoltaik, Leo Brandt Strasse, Jülich, 52425, Germany
Lars Niessen
Affiliation:
l.niessen@fz-juelich.de, Forschungszentrum Jülich GmbH, IEF5 Photovoltaik, Leo Brandt Strasse, Jülich, 52425, Germany
Frank Pennartz
Affiliation:
f.pennartz@fz-juelich.de, Forschungszentrum Jülich GmbH, IEF5 Photovoltaik, Leo Brandt Strasse, Jülich, 52425, Germany
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Abstract

The microstructure of hot-wire microcrystalline silicon films prepared at a wide range of deposition conditions was characterized by both the microstructure parameter from infrared absorption data (analyzing the Si-H stretching modes) and the effusion spectra of (low dose) implanted He and Ne. Parameter ranges leading to the growth of a dense material are identified. A (relatively) high silane flow at rather high filament temperature is found to result in a dense material at high deposition rate. The microstructure data obtained by the two microstructure characterization methods are found to be largely correlated.

Keywords

microstructurechemical vapor deposition (CVD) (deposition)infrared (IR) spectroscopy

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References

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