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Microcrystalline Cubic Boron Nitride/Amorphous Hydrogenated Boron Nitride Mixed Phase Thin Films

Published online by Cambridge University Press:  28 February 2011

Shu-Han Lin  and
Bernard J. Feldman
Shu-Han Lin
Affiliation:
Department of Physics and the Center for Molecular Electronics, University of Missouri, St. Louis, MO 63121
Bernard J. Feldman
Affiliation:
Department of Physics and the Center for Molecular Electronics, University of Missouri, St. Louis, MO 63121
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Abstract

Transparent and insulating thin films have been grown by the plasma decomposition of B2H6, NH3, and H2, at a substrate temperature of 250°C. From chemical composition, transmission electron microscopy, infrared absorption, and optical absorption measurements, the thin films are determined to be a mixed phase of crystalline cubic boron nitride and amorphous hydrogenated boron nitride. Also, the films have significantly more boron than nitrogen, a large concentration of hydrogen, a very large bandgap, strong infrared aborption due to both hexagonal boron nitride and boron icosahedra, and good adhesion to various substrates.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 817
Copyright
Copyright © Materials Research Society 1995

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References

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