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Metastable Zincblende MnTe and MnSe: MBE Growth and Characterization

Published online by Cambridge University Press:  03 September 2012

R. L. Gunshor ,
L. A. Kolodziejski ,
M. Kobayashi ,
A. V. Nurmikko  and
N. Otsuka
R. L. Gunshor
Affiliation:
Purdue University, West Lafayette IN 47907
L. A. Kolodziejski
Affiliation:
Permanent Address: Massachusetts Institute of Technology, Cambridge, MA 02139
M. Kobayashi
Affiliation:
Purdue University, West Lafayette IN 47907
A. V. Nurmikko
Affiliation:
Brown University, Providence RI 02912
N. Otsuka
Affiliation:
Purdue University, West Lafayette IN 47907
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Abstract

Epilayers of metastable zincblende MnSe and MnTe have been grown by molecular beam epitaxy. The MnSe structures have been used to study magnetic ordering in thin layers by means of optical and magnetic measurements. Preliminary optical reflectance measurements performed on samples of zincblende MnTe indicate a bandgap of approximately 3.15eV, while double barrier quantum structures demonstrate optical transitions corresponding to 2D electron and hole confinement. Optical measurements further provide insight into the band offsets existing between MnTe and CdTe, as well as between MnTe and ZnTe epilayers.

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References

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