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Low-k Dielectric Obtained by Noble Gas Implantation in Silicon Oxide

Published online by Cambridge University Press:  01 February 2011

Hanan Assaf ,
E. Ntsoenzok ,
M-O. Ruault  and
S. Ashok
Hanan Assaf
Affiliation:
assaf@cnrs-orleans.fr, CERI, CNRS, 3a, rue de la férollerie, Orleans, 45071, France
E. Ntsoenzok
Affiliation:
esidor@cnrs-orleans.fr, University of Orleans, LESI, 21 rue de loigny la bataille, Chartres, 28000, France
M-O. Ruault
Affiliation:
ruault@csnsm.in2p3.fr, CNRS-IN2P3, CSNSM, Batiment 108-F, Orsay, N/A, 91405, France
S. Ashok
Affiliation:
sashok@psu.edu, the Pennsylvania State University, Department of Engineering Science, 212 Earth and Engineering Science Building, University Park, Pennsylvania, PA, 16802, United States
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Abstract

Thermally-grown 220nm-thick silicon oxide layers were implanted at room temperature with 300keV Xe at doses ranging from 0.5 to 5x1016Xe/cm2. As-implanted samples exhibit bubbles in silicon oxide for all doses. Annealing at T≤400°C results in the disappearance of bubbles from SiO2 layer for the dose of 1x1016Xe/cm2. But for the higher doses of 3.5 and 5x1016Xe/cm2, the bubbles are very stable and remain in the sample even after very high thermal annealing. Capacitance measurements show a strong decrease in the dielectric constant k of the implanted SiO2 sample from 4 (reference sample) to 1.5.

Keywords

oxideion-implantationdielectric

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