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Low-Energy, Pulsed-Laser Irradiation of Amorphous Silicon:Melting and Resolidification at Two Fronts

Published online by Cambridge University Press:  25 February 2011

W. Sinke  and
F.W. Saris
W. Sinke
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
F.W. Saris
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
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Abstract

After low-energy pulsed-laser irradiation of Cu-implanted silicon, adouble-peak structure is observed in the Cu concentration profile, whichresults from the occurrence of two melts. From Cu surface segregation wecalculate the depth of the surface melt. Cu segregation near the position ofthe amorphous-crystalline interface gives evidence for a self-propagatingmelt, moving from the surface region towards the crystalline substrate.Measurements of As-redistribution and of sheet resistance as a function oflaser energy density in As-implanted silicon are consistent with thecrystallization model which is derived from the effects as observed inCu-implanted silicon.

The results imply a large difference in melting temperature, heatconductivity and heat of melting between amorphous silicon and crystallinesilicon.

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References

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