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Lateral Transport through Self-Assembled InAs Quantum Dots Located in the Narrow Gap Electrodes

Published online by Cambridge University Press:  10 February 2011

S. K. Jung ,
S. W. Hwang ,
J. H. Park ,
B. D. Min ,
E. K. Kim  and
Yong Kim
S. K. Jung
Affiliation:
School of Electrical Engineering, Korea University, Seoul 136-701, Korea
S. W. Hwang
Affiliation:
School of Electrical Engineering, Korea University, Seoul 136-701, Korea
J. H. Park
Affiliation:
School of Electrical Engineering, Korea University, Seoul 136-701, Korea
B. D. Min
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O.Box 131, Seoul 130-650, Korea
E. K. Kim
Affiliation:
School of Electrical Engineering, Korea University, Seoul 136-701, Korea
Yong Kim
Affiliation:
Department of Physics, College of Natural Sciences, Dong-A University, Hadan-2-Dong 840, Saha-gu, Pusan 604-714, Korea
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Abstract

We have fabricated and characterized the lateral electron transport through InAs quantum dots with double barrier system. Aluminum metal electrodes with the inter-electrode spacing of 30 nm have been deposited on an InAs self-assembled quantum dot wafer to form the planar type quantum dot devices. Current peak structure and negative differential resistance effects are observed above 77 K in current-voltage characteristics. These results are interpreted as due to 3D-0D resonant tunneling through the single quantum dot positioned in between the electrodes.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 571: Symposium W – Semiconductor Quantum Dots , 1999 , 209
Copyright
Copyright © Materials Research Society 2000

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References

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