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Laser-Induced Chemical Vapor Deposition of Silicon Nitride Films

Published online by Cambridge University Press:  21 February 2011

Gary A. West  and
Arunava Gupta
Gary A. West
Affiliation:
Allied Corporation Corporate Research Center Box 1021R Morristown, New Jersey 07960
Arunava Gupta
Affiliation:
Allied Corporation Corporate Research Center Box 1021R Morristown, New Jersey 07960
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Abstract

Films of silicon nitride have been deposited using a continuous wave CO2 laser to excite gaseous mixtures of silane and ammonia. A typical deposition rate is 150Å/min. The hydrogen film content and its dependence on the substrate deposition temperature are similar to that observed for plasma CVD silicon nitride. The CO2 laser CVD films are silicon rich with a Si/N ratio = 1.2 at a NH3/SiH4 gas flow ratio of 1000. Conformal step coverage is observed on patterned silicon oxide features.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 29: Symposium I – Laser-Controlled Chemical Processing of Surfaces , 1983 , 61
Copyright
Copyright © Materials Research Society 1984

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References

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