Hostname: page-component-54dcc4c588-42vt5 Total loading time: 0 Render date: 2025-10-06T13:13:07.386Z Has data issue: false hasContentIssue false
  • English
  • Français

Laser-Excited Fluorescence Detection of Si2 During Silane CVD

Published online by Cambridge University Press:  21 February 2011

William G. Breiland ,
Michael E. Coltrin  and
Pauline Ho
William G. Breiland
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
Michael E. Coltrin
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
Pauline Ho
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
Get access

Abstract

Using laser-excited fluorescence, Si2 has been observed in a CVD cell during the deposition of silicon from silane.The formation of Si2 was predicted by our numerical model for CVD which includes a detailed treatment of the chemical kinetics and fluid flow in the gas phase. Our observations of Si2 provide strong support for this model. We also find excellent agreement between the temperature dependence of silicon deposition rates predicted by the model and experimental deposition rates from the literature. These observations indicate that gas-phase chemical reaction kinetics are more important in silane CVD than has been recognized previously.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 29: Symposium I – Laser-Controlled Chemical Processing of Surfaces , 1983 , 225
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Coltrin, M. E., Kee, R. J., and Miller, J. A., to appear in J. Electrochem. Soc. 131, 425 (1984).CrossRefGoogle Scholar
2. Eversteyn, F. C., Severin, P. J. W., van den Brekel, C. H. J., and Peek, H. L., J. Electrochem. Soc. 117, 925 (1970).Google Scholar
3. Bradshaw, S. E., Int. J. Electron. 21, 205 (1966).Google Scholar
4. Shepherd, W. H., J. Electrochem. Soc. 112, 988 (1965).Google Scholar
5. Rundle, P. C., Int. J. Electron. 24, 405 (1968).Google Scholar
6. van den Brekel, C. H. J., Thesis, University of Nijmegen, p. 66 (1978).Google Scholar
7. See for example Bloem, J. and Giling, L. J., Ch. 4 of “Current Topics in Materials Science”, Kaldis, E., ed., North-Holland, 1978.Google Scholar
8. Farrow, R. F. C., J. Electrochem. Soc. 121, 899 (1974).Google Scholar
9. Breiland, W. G. and Kushner, M. J., Appl. Phys. Lett. 42, 395 (1983).Google Scholar
10. Ho, P. and Breiland, W. G., Appl. Phys. Lett. 43, 125 (1983).Google Scholar
11. Verma, R. D. and Warsop, P. A., Can. J. Phys. 41, 152 (1963).CrossRefGoogle Scholar
12. Dubois, I. and Leclercq, H., Can. J. Phys. 49, 3053 (1971).Google Scholar