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Ion beam radiation effects on InAs semiconductor quantumdots

Published online by Cambridge University Press:  17 March 2011

J. Zhu ,
M. Thaik ,
M. Yakimov ,
S. Oktyabrsky ,
A. E. Kaloyeros  and
M. B. Huang
J. Zhu
Affiliation:
Department of Physics and Institute of Materials Research and Applied Sciences, University at Albany, State University of New York, Albany, NY 12222
M. Thaik
Affiliation:
Department of Physics and Institute of Materials Research and Applied Sciences, University at Albany, State University of New York, Albany, NY 12222
M. Yakimov
Affiliation:
Department of Physics and Institute of Materials Research and Applied Sciences, University at Albany, State University of New York, Albany, NY 12222
S. Oktyabrsky
Affiliation:
Department of Physics and Institute of Materials Research and Applied Sciences, University at Albany, State University of New York, Albany, NY 12222
A. E. Kaloyeros
Affiliation:
Department of Physics and Institute of Materials Research and Applied Sciences, University at Albany, State University of New York, Albany, NY 12222
M. B. Huang
Affiliation:
Department of Physics and Institute of Materials Research and Applied Sciences, University at Albany, State University of New York, Albany, NY 12222
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Abstract

Self-assembled quantum dots (QDs) have attracted significant attentionbecause of their potential applications in novel semiconductor devices. Inthis work, we investigated radiation effects induced by 1.0 MeV proton ionbeams on InAs self-assembled quantum dots. In particular, we emphasized theeffects of lattice environments of QDs on their luminescence emission afterion beam irradiation. Photoluminescence (PL) spectroscopy was used tocharacterize the optical properties of QDs subjected to proton irradiationand post-irradiation annealing. Compared to the single-layer QDs grown inGaAs films, the QDs embedded in an AlAs/GaAs superlattice exhibited muchhigher PL degradation resistance to proton beam bombardment, e.g., at thehighest dose (1.0×1014 cm−2) used in this work, adifference of ~ 20-fold in PL intensity was found between the QDs configuredin these two different lattice structures. After thermal annealing ofirradiated QD samples, ion beam enhanced blueshift of PL was observed to bemuch more pronounced for the single-layer QDs. We discuss mechanisms thatmay result in the differences in optical response to ion beams between QDswith different lattice surroundings.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O11.31
Copyright
Copyright © Materials Research Society 2001

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References

Referencse

1. Weisbuch, C. and Vinter, B., Quantum Semiconductor Structures (Academic Press, New York 1991).Google Scholar
2. Stintz, A., Liu, G. T., Gray, A. L., Spillers, R., Delgado, S. M. and Malloy, K. J., J. Vac. Sci. Technol. B 18, 1496 (2000).Google Scholar
3. Wellmann, P. J., Schoenfeld, W. V., Garcia, I. M. and Petroff, P. M., J. Eletron. Mat. 27, 1030 (1998).Google Scholar
4. Schoenfeld, W. V., Chen, C.-H., Petroff, P. M. and Hu, E. L., Appl. Phys. Lett. 73, 2935 (1998).Google Scholar
5. Leon, R., Swift, G. M., Magness, B., Taylor, W. A., Tang, Y. S., Wang, K. L., Dowd, P. and Zhang, Y. H., Appl. Phys. Lett. 76, 2074 (2000).Google Scholar
6. Piva, P. G., Goldberg, R. D., Mitchell, I. V., Labrie, D., Leon, R., Charbonneau, S., Wasilewski, Z. R. and Fafard, S., Appl. Phys. Lett. 77, 624 (2000).Google Scholar
7. Tersoff, J., Teichert, C. and Lagally, M. G., Phys. Rev. Lett. 76, 1675 (1996).Google Scholar
8. Petitprez, E., Moshegov, N. T., Marega, E. Jr, Mazel, A., Dorignac, D. and Fourmeaux, R., J. Vac. Sci. Technol. B 18, 1493 (2000).Google Scholar
9. Chiquito, A. J., Pusep, Y. A., Mergulhão, S., Galzerani, J. C., Moshegov, N. T. and Miller, D. L., J. Appl. Phys. 88, 1987 (2000).Google Scholar
10. Solomon, G. S., Trezza, J. A., Marshall, A. F. and Harris, J. S. Jr, Phys. Rev. Lett. 76, 952 (1996).Google Scholar
11. Marcinkevičius, S. and Leon, R., Appl. Phys. Lett. 76, 2406 (2000).Google Scholar
12. Ballet, P., Smathers, J. B. and Salamo, G. J., Appl. Phys. Lett. 75, 337 (1999).Google Scholar
13. Arzberger, M., Käsberger, U., Böhm, G. and Abstreiter, G., Appl. Phys. Lett. 75, 3968 (1999).Google Scholar
14. Xie, Q. H., Madhukar, A., Chen, P. and Kobayashi, N. P., Phys. Rev. Lett. 75, 2542 (1995).Google Scholar
15. Teichert, C., Lagally, M. G., Peticolas, L. J., Bean, J. C. and Tersoff, J., Phys. Rev. B 53, 16334 (1996).Google Scholar
16. Lipinski, M. O., Schuler, H., Schmidt, O. G., Eberl, K. and Jin-Phillipp, N. Y., Appl. Phys. Lett. 77, 1789 (2000).Google Scholar
17. Marzin, J.-Y., Gérard, J.-M., Izraël, A., Barrier, D., Bastard, G., Phys. Rev. Lett. 73, 716 (1994).Google Scholar
18. Grundmann, M., Stier, O. and Bimberg, D., Phys. Rev. B 52, 11969 (1995).Google Scholar
19. Saarinen, K., Hautojärvi, P., Keinonen, J., Rauhala, E., Räisä, J. nen and Corbel, C., Phys. Rev. B 43, 4249 (1991).Google Scholar
20. Perret, N., Morris, D., Franchomme-Fossé, L., Côté, R., Fafard, S., Aimez, V. and Beauvais, J., Phys. Rev. B 62, 5092 (2000).Google Scholar