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Interaction Between Basal Stacking Faults and Prismatic Inversion Domain Boundaries in GaN

Published online by Cambridge University Press:  17 March 2011

Philomela Komninou ,
Joseph Kioseoglou ,
Eirini Sarigiannidou ,
George P. Dimitrakopulos ,
Thomas Kehagias ,
Alexandros Georgakilas ,
Gerard Nouet  and
Pierre Ruterana
Philomela Komninou
Affiliation:
Theodoros Karakostas Physics Department, Aristotle University of Thessaloniki, Thessaloniki, GR-54006, Greece
Joseph Kioseoglou
Affiliation:
Theodoros Karakostas Physics Department, Aristotle University of Thessaloniki, Thessaloniki, GR-54006, Greece
Eirini Sarigiannidou
Affiliation:
Theodoros Karakostas Physics Department, Aristotle University of Thessaloniki, Thessaloniki, GR-54006, Greece
George P. Dimitrakopulos
Affiliation:
Theodoros Karakostas Physics Department, Aristotle University of Thessaloniki, Thessaloniki, GR-54006, Greece
Thomas Kehagias
Affiliation:
Theodoros Karakostas Physics Department, Aristotle University of Thessaloniki, Thessaloniki, GR-54006, Greece
Alexandros Georgakilas
Affiliation:
IESL/FORTH and Physics Department, University of Crete, Heraklion-Crete, P.O.Box 1527, 71110, Greece
Gerard Nouet
Affiliation:
ESCTM-CRISMAT, UMR6508-CNRS, ISMRA Caen Cedex, 6 boul. du Marechal Juin, 14050, France
Pierre Ruterana
Affiliation:
ESCTM-CRISMAT, UMR6508-CNRS, ISMRA Caen Cedex, 6 boul. du Marechal Juin, 14050, France
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Abstract

The interaction of growth intrinsic stacking faults with inversion domain boundaries in GaN epitaxial layers is studied by high resolution electron microscopy. It is observed that stacking faults may mediate a structural transformation of inversion domain boundaries, from the low energy types, known as IDB boundaries, to the high energy ones, known as Holt-type boundaries. Such interactions may be attributed to the different growth rates of adjacent domains of inverse polarity.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G3.44
Copyright
Copyright © Materials Research Society 2001

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References

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