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Infrared Spectroscopy of Deuterated a-Si, Ge:D, F Alloys Prepared by DC Glow Discharge Deposition

Published online by Cambridge University Press:  28 February 2011

Y. Okada ,
D. Slobodin ,
S. F. Chou ,
R. Schwarz  and
S. Wagner
Y. Okada
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, New Jersey 08544
D. Slobodin
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, New Jersey 08544
S. F. Chou
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, New Jersey 08544
R. Schwarz
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, New Jersey 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, New Jersey 08544
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Abstract

Deuterated and fluorinated amorphous silicon-germanium alloys, a-Si, Ge:D, F, were studied by Fourier transform infrared (IR) spectroscopy. No Ge.-F modes are observed. The intensity of the Si-F and Si-F2 modes increases with Ge concentration. So does thae intensity of SiF4 which is trapped as isolated molecules. No DF (IR) or F2 (Raman) is observed. The IR spectra of alloys annealed at 300, 400, 500 and 600° C show that the fluorine in the Si-F and Si-F2 groups and in the SiF4 molecules is in thermochemical equilibrium.

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References

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