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Influence of the Gate Bias and Temperature on Positive Charge Generation in TFT Gate-Quality Amorphous Silicon Nitride Films

Published online by Cambridge University Press:  21 February 2011

Jerzy Kanicki  and
Mythili Sankaran
Jerzy Kanicki
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
Mythili Sankaran
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
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Abstract

We report on the illumination time dependence of the generation of positive charge in gate-quality nitrogen-rich amorphous silicon nitride films subjected to sub-bandgap illumination at different temperature in vacuum. The influence of film thickness and gate bias applied during illumination on the generation of positive charge is also described. We have found that a stretched-exponential function, which characterizes dispersive charge transport in silicon nitride, gives the best description of our experimental results.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 363
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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