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Hot-Wire Chemical Vapor Deposition Epitaxy on Polycrystalline Silicon Seeds on Glass

Published online by Cambridge University Press:  01 February 2011

Charles W. Teplin ,
Howard M. Branz ,
Kim M. Jones ,
Manuel J. Romero ,
Paul Stradins  and
Stefan Gall
Charles W. Teplin
Affiliation:
Charles_Teplin@NREL.gov, NREL, NCPV, 1617 Cole Blvd, Golden, CO, 80401, United States, 303-384-6440, 303-384-7600
Howard M. Branz
Affiliation:
Howard_Branz@NREL.gov, NREL, NCPV, 1617 Cole Blvd, Golden, CO, 80401, United States
Kim M. Jones
Affiliation:
Kim_Jones@Nrel.gov, NREL, NCPV, 1617 Cole Blvd, Golden, CO, 80401, United States
Manuel J. Romero
Affiliation:
Manuel_Romero@NREL.gov, NREL, NCPV, 1617 Cole Blvd, Golden, CO, 80401, United States
Paul Stradins
Affiliation:
Pauls_Stradins@NREL.gov, NREL, NCPV, 1617 Cole Blvd, Golden, CO, 80401, United States
Stefan Gall
Affiliation:
gall@hmi.de, Hahn-Meitner-Institut Berlin, Kekuléstr. 5, D-12489, Berlin, N/A, Germany
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Abstract

During the last few years, hot-wire chemical vapor deposition (HWCVD) has been explored as a low-temperature process for epitaxially thickening c-Si seeds layers on low cost substrates. Here, we demonstrate HWCVD epitaxy on thin polycrystalline silicon seed layers on borosilicate glass substrates. The crystal Si seeds are large-grained (~10 µm) polycrystalline silicon that were fabricated by Al-induced crystallization of a-Si. We report the growth of 0.5 µm of epitaxy at ~670°C.

Keywords

photovoltaicSiepitaxy

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References

[1] Bergmann, R.B. and Werner, J.H., Thin Solid Films 403, 162 (2002).Google Scholar
[2] Fuhs, W., Gall, S., Rau, B., Schmidt, M. and Schneider, J., Sol. Energy 77, 961 (2004).Google Scholar
[3] Teplin, C., Ginley, D. and Branz, H.M., J. Non-Cryst. Sol. 352, 984 (2006).Google Scholar
[4] Richardson, C., Mason, M. and Atwater, H., Thin Solid Films 501, 332 (2006).Google Scholar
[5] Basore, P., 21st European Photovoltaic Solar Energy Conference - Dresden, Germany Oral presentation (2006).Google Scholar
[6] Bergmann, R., Shi, F. and Krinke, J., Phys. Rev. Lett. 80, 1011 (1998).Google Scholar
[7] Gall, S., Schneider, J., Klein, J., Hubener, K., Muske, M., Rau, B., Conrad, E., Sieber, I., Petter, K., Lips, K., Stoger-Pollach, M., Schattschneider, P. and Fuhs, W., Thin Solid Films 511, 7 (2006).Google Scholar
[8] Aberle, A., J. Cryst. Growth 287, 386 (2006).Google Scholar
[9] Ekanayake, G., Quinn, T., Reehal, H.S., Rau, B. and Gall, S., J. Cryst. Growth 299, 309 (2007).Google Scholar
[10] Straub, A., Inns, D., Terry, M.L., Huang, Y., Widenborg, P. and Aberle, A., Thin Solid Films 511, 41 (2006).Google Scholar
[11] Gorka, B., Dogan, P., Sieber, I., Fenske, F. and Gall, S., Thin Solid Films in press (2007).Google Scholar
[12] Wang, Q., Teplin, C., Stradins, P., To, B., Jones, K.M. and Branz, H.M., J. Appl. Phys. 100, 093520 (2006).Google Scholar
[13] Stradal, J., Scholma, G., Li, H., Werf, C.H.M. Van Der, Rath, J.K., Widenborg, P., Campbell, P., Aberle, A. and Schropp, R., Thin Solid Films 501, 335 (2006).Google Scholar
[14] Lautenschlager, P., Garriga, M., Vina, L. and Cardona, M., Phys. Rev. B 36, 4821 (1987).Google Scholar
[15] Teplin, C., Iwaniczko, E., To, B., Moutinho, H., Stradins, P. and Branz, H.M., Phys. Rev. B 74, 235428 (2006).Google Scholar