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Growth Studies of Heteroepitaxial Ge Films ON Si

Published online by Cambridge University Press:  28 February 2011

D.J. Heim ,
T.G. Holesinger ,
K.M. Lakin  and
H.R. Shanks
D.J. Heim
Affiliation:
Microelectronics Research Center, Iowa State University, 1925 Scholl Road, Ames, Iowa.
T.G. Holesinger
Affiliation:
Microelectronics Research Center, Iowa State University, 1925 Scholl Road, Ames, Iowa.
K.M. Lakin
Affiliation:
Microelectronics Research Center, Iowa State University, 1925 Scholl Road, Ames, Iowa.
H.R. Shanks
Affiliation:
Microelectronics Research Center, Iowa State University, 1925 Scholl Road, Ames, Iowa.
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Abstract

One of the approaches to the growth of GaAs on Si substrates involves the use of a heteroepitaxial buffer layer such as Ge to reduce lattice mismatch. Recently, we have had success in growing heteroepitaxial Ge films on low temperature (∼275-500°C) Si substrates by the ionized cluster beam (ICB) technique. The design of a computer-controlled phase modulated ellipsometer for rapid monitoring of the initial stages of nucleation will be described. Ellipsometric data for single crystalline, polycrystalline and amorphous morphologies are reported.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 523
Copyright
Copyright © Materials Research Society 1988

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References

1 Baribeau, J.M., Jackman, T.E., Maigne, P., Houghton, D.C., Denhoff, M.W., J. Vac. Sci. Technol. A 5, 1898–1905 (1987).CrossRefGoogle Scholar
2 Pearsall, T.P., Bean, J.C., People, R., and Fiory, A.T., Proc. 1st Int. Symp. Silicon Molecular Beam Epitaxy, (Pennington, NJ 1985), p. 366.Google Scholar
3 Luryi, S., Kastalsky, A., and Bean, J.C., IEEE Trans. Electron Devices, ED–31, 1135 (1984).CrossRefGoogle Scholar
4 Temkin, H., Pearsall, T.P., Bean, J.C., Logan, R.A., and Luryi, S, Appl. Phys. Lett. 48, (1986).CrossRefGoogle Scholar
5 Drevillon, B., Thin Solid Films 130, 165–170 (1985).CrossRefGoogle Scholar
6 Collins, R.W. and Cavese, J.M., SPIE 794, 242–251 (1987).Google Scholar
7 Antoine, A.M., Drevillon, B., CaBrrocas, P.R., J. Appl. Phys. 61 (7), 2501–2508 (1987).CrossRefGoogle Scholar
8 McCalmont, J.S., Shanks, H.R., Lakin, K.M., Proceedings of the International Ion Engineering Congress ISIAT 83, Kyoto, Japan (1986).Google Scholar
9 S.N Jasperson and Schnatterly, S.E., Rev. Sci. Instrum. 40 (6), 761–767 (1969).Google Scholar
10 Heim, D.J., M.S. Thesis, Iowa State University, (1988).Google Scholar
11 Aspnes, D.E. and Studna, A.A., Appl. Phys. Lett. 39 (4), 317 (1981).Google Scholar
12 Pickering, C., Robbins, D.J., Young, I.M., Glasper, J.L., Johnson, M. and Jones, R. in Initial Stages of Epitaxial Growth, edited by Hull, R., Gibson, J.M., Smith, D.A. (Mater. Res. Soc. Proc. 94, Pittsburgh, PA 1987) pp. 173–178.Google Scholar