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Growth, Structure, and Thin Film Stress in TiAl AND Ti3Al FILMS

Published online by Cambridge University Press:  15 February 2011

M. Chinmulgund ,
R. B. Inturi  and
J. A. Barnard
M. Chinmulgund
Affiliation:
Department of metallurgical and Materials Engineering, The University of Alabama, Tuscaloosa, Al 35487–0202
R. B. Inturi
Affiliation:
Department of metallurgical and Materials Engineering, The University of Alabama, Tuscaloosa, Al 35487–0202
J. A. Barnard
Affiliation:
Department of metallurgical and Materials Engineering, The University of Alabama, Tuscaloosa, Al 35487–0202
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Abstract

Thin films of Ti, Al, TiAl and Ti3Al were deposited by dc magnetron sputtering onto 2” dia. oxidized Si<111> wafers and their mechanical properties were studied by measuring the internal stress in the films. Ti and Ti3Al films show hexagonal structure with preferred orientation in the (0002) direction. TiAl is tetragonal, nanocrystalline, and (111) oriented; Al is random fee polycrystalline in nature. Young's Modulii of thin films of these materials were calculated from the stress temperature plots. The E values of TiAI and Ti3Al thin films were found to be significantly higher than those of the bulk Materials.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 503
Copyright
Copyright © Materials Research Society 1994

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References

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