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Growth and Device Applications of Epitaxial Insulators on Semiconductors

Published online by Cambridge University Press:  25 February 2011

Hiroshi Ishiwara
Hiroshi Ishiwara*
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuda, Midoriku, Yokohama 227, Japan
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Abstract

Growth characteristics and device applications of heteroepitaxial insulator/semiconductor structures are reviewed. Discussions are made on both fluoride insulators such as CaF2, SrF2, BaF2, LaF3, CeF3, etc. and oxide insulators such as MgOAl2O3, CeO2, ZrO2, (Ba,Sr)O, SrTiO3, etc. First, the growth methods and typical results on the crystalline quality of the films are mainly discussed. In some cases, growth characteristics of semiconductor overlayers on the insulator / semiconductor structures are also discussed. Finally, applications of these structures to future electron devices are reviewed.

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References

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