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Growth and Characterization of Epitaxial GaAs on Ge/Si Substrates

Published online by Cambridge University Press:  22 February 2011

Robert M. Fletcher ,
D. Ken Wagner  and
Joseph M. Ballantyne
Robert M. Fletcher
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853
D. Ken Wagner
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853
Joseph M. Ballantyne
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853
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Abstract

Epitaxial GaAs layers have been grown on Ge-coated Si substrates. Deposition of epitaxial Ge was performed by electron beam evaporation onto a <100> Si substrate. GaAs was then deposited by organometallic vapor-phase epitaxy. Films grown over large areas (∼1 cm2) and by selective epitaxy in stripe patterns (∼50 μm wide) have been evaluated by a number of techniques to determine structural and electrical properties. In addition, we report what we believe to be the first LEDs fabricated in GaAs/Ge/Si heterostructures.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 417
Copyright
Copyright © Materials Research Society 1984

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References

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